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ES1G PDF预览

ES1G

更新时间: 2024-11-28 10:15:19
品牌 Logo 应用领域
金誉半导体 - HTSEMI 二极管光电二极管
页数 文件大小 规格书
3页 426K
描述
1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts

ES1G 数据手册

 浏览型号ES1G的Datasheet PDF文件第2页浏览型号ES1G的Datasheet PDF文件第3页 
ES1A  
THRU  
ES1M  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
ꢀꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
·
·
·
·
·
For Surface Mount Applications  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1 Amp Super Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
Extremely Low Thermal Resistance  
Easy Pick And Place  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
·
Operating Temperature: -50°C to +150°C  
·
·
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
DO-214AC  
(SMAJ) (High Profile)  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
H
Catalog  
Number  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
Cathode Band  
ES1A  
ES1B  
ES1C  
ES1D  
ES1G  
ES1J  
ES1K  
ES1M  
ES1A  
ES1B  
ES1C  
ES1D  
ES1G  
ES1J  
ES1K  
ES1M  
35V  
J
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
70V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
Electrical Characteristics @ 25°C Unless Otherwise Specified  
G
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75°C  
DIMENSIONS  
INCHES  
MIN  
.078  
.067  
.002  
---  
.035  
.065  
.205  
.160  
.100  
MM  
MIN  
1.98  
1.70  
.05  
---  
.89  
1.65  
5.21  
4.06  
2.57  
DIM  
A
B
C
D
E
MAX  
.116  
.089  
.008  
.02  
.055  
.096  
.224  
.180  
.112  
MAX  
2.95  
2.25  
.20  
NOTE  
Peak Forward Surge  
Current  
Maximum  
IFSM  
30A  
8.3ms, half sine  
.51  
1.40  
2.45  
5.69  
4.57  
2.84  
Instantaneous  
F
G
H
J
Forward Voltage  
ES1A-D  
.975V  
1.35V  
1.60V  
VF  
IR  
IFM = 1.0A;  
TJ = 25°C*  
ES1G-K  
ES1M  
Maximum DC  
SUGGESTED SOLDER  
PAD LAYOUT  
Reverse Current At  
Rated DC Blocking  
Voltage  
5mA  
TJ = 25°C  
0.090”  
100mA TJ = 100°C  
Maximum Reverse  
Recovery Time  
0.085”  
ES1A-D  
50ns  
Trr  
CJ  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
ES1G-K  
60ns  
ES1M  
100ns  
Typical Junction  
Capacitance  
45pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 200 msec, Duty cycle 2%  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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