Datasheet > ES1G

ES1G

更新时间： 2024-11-28 10:15:19

品牌	Logo	应用领域
海湾 - GULFSEMI		二极管光电二极管
页数	文件大小	规格书
2页	97K
描述
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE：50 TO 600V CURRENT： 1.0A

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中文翻译

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数据手册

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ES1G 数据手册

ES1A THRU ES1J

SURFACE MOUNT FAST

ULTRAFAST RECTIFIER

VOLTAGE：50 TO 600V

CURRENT： 1.0A

SMA／DO-214AC

FEATURE

Ideal for surface mount pick and place application

Low profile package

Built-in strain relief

High surge capability

High temperature soldering guaranteed

260℃/10sec/at terminals

Glass passivated chip

Ultrafast recovery time for high efficiency

MECHANICAL DATA

Terminal：Solder plated, solderable per MIL-STD-750,

Method 2026

Case： JEDEC DO-214AC molded plastic body over

passivated chip

Polarity： Color band denotes cathode

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,

for capacitive load, derate current by 20％)

SYMBOL

Vrrm

ES1A

ES1B

100

ES1C

150

ES1D

200

ES1G

400

ES1J

600

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrms

105

140

280

420

Vdc

Maximum DC blocking Voltage

100

150

200

400

600

Maximum Average Forward Rectified

Current 3/8″lead length at T_L=110℃

Peak Forward Surge Current 8.3ms single

half sine- wave superimposed on rated load

Maximum Forward Voltage at rated forward

current

If(av)

Ifsm

1.0

30.0

0.92

1.25

1.5

10.0

μA

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25℃

Ta =125℃

100.0

Trr

Maximum Reverse Recovery Time (Note1 )

18.0

30.0

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

R(jl)

℃/W

Tstg, Tj

-50 to +150

Storage and Operating Junction Temperature

℃

Note：

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area¹

Rev.A1

www.gulfsemi.com

中文翻译

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