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ES1G

更新时间: 2024-11-18 03:34:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管光电二极管
页数 文件大小 规格书
4页 158K
描述
Fast Rectifiers

ES1G 数据手册

 浏览型号ES1G的Datasheet PDF文件第2页浏览型号ES1G的Datasheet PDF文件第3页浏览型号ES1G的Datasheet PDF文件第4页 
July 2007  
ES1F - ES1J  
Fast Rectifiers  
Features  
For surface mount applications.  
Glass passivated junction.  
Low profile package.  
Easy pick and place.  
Built-in strain relief.  
Superfast recovery times for high efficiency.  
SMA(DO-214AC)  
Color Band Denotes Cathode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Value  
Symbol  
Parameter  
Units  
ES1F  
ES1G  
ES1H  
ES1J  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
300  
400  
500  
600  
V
A
1.0  
30  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave (JEDEC method)  
IFSM  
A
TJ  
TSTG  
PD  
Junction Temperature  
Storage Temperature Range  
Power Dissipation  
150  
°C  
°C  
W
-55 to 150  
1.47  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
RθJA  
Parameter  
Value  
85  
Units  
°C/W  
Thermal Resistance, Junction to Ambient *  
RθJL  
Thermal Resistance, Junction to Lead *  
35  
°C/W  
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VF  
Maximum Forward Voltage @ IF = 1.0 A  
1.3  
1.7  
8.0  
V
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
Trr  
IR  
35  
ns  
uA  
pF  
Maximum Reverse Current @ rated VR TA = 25°C  
TA = 100°C  
5.0  
100  
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
Cj  
10.0  
©2007 Fairchild Semiconductor Corporation  
ES1F - ES1J Rev. A  
1
www.fairchildsemi.com  

ES1G 替代型号

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US1G-E3/5AT VISHAY

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