Datasheet > ES1DHE3_A/

ES1DHE3_A/

更新时间： 2024-01-31 19:55:03

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	78K
描述
SIGNAL DIODE

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技术参数
数据手册

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ES1DHE3_A/ 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.55	Is Samacsys：	N
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	MATTE TIN	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

ES1DHE3_A/ 数据手册

ES1A thru ES1D

Vishay General Semiconductor

www.vishay.com

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

1.0 A

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

t_rr

50 V to 200 V

30 A

Base P/N-E3

RoHS-compliant, commercial grade

15 ns

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

V_F

0.92 V

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES1A

ES1B

ES1C

ES1D

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

100

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 27-Feb-13

Document Number: 88586

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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