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ES1DLED PDF预览

ES1DLED

更新时间: 2024-11-28 12:51:35
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星合电子 - GXELECTRONICS /
页数 文件大小 规格书
2页 354K
描述
SURFACE MOUNT SUPER FAST RECTIFIER

ES1DLED 数据手册

 浏览型号ES1DLED的Datasheet PDF文件第2页 
ES1AL THRU ES1JL  
SURFACE MOUNT SUPER FAST RECTIFIER  
Reverse Voltage - 50 to 600 Volts Forward Current -  
1.0 Ampere  
星合 子  
XINGHE ELECTRONICS  
FEATURES  
SOD-123FL  
Glass passivated device  
Ideal for surface mouted applications  
Low reverse leakage  
Cathode Band  
Top View  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
2.8±0.1  
0.6±0.25  
MECHANICAL DATA  
Case: JEDEC SOD-123FL molded plastic body over passivated chip  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
3.7±0.2  
Weight:0.0007 ounce, 0.02 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
ES1GL  
EG  
ES1DL ES1EL  
ES1JL  
EJ  
ES1BL ES1CL  
ES1AL  
EA  
UNITS  
EB  
100  
70  
EC  
150  
105  
150  
ED  
EE  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
300  
210  
300  
200  
140  
200  
400  
280  
400  
VRRM  
VRMS  
VDC  
600  
420  
600  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
I(AV)  
1.0  
Amp  
Peak forward surge current  
IFSM  
VF  
25.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
Maximum instantaneous forward voltage at1.0A  
1.7  
1.25  
0.95  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
IR  
TA=100 C  
trr  
ns  
Maximum reverse recovery time (NOTE 1)  
Typical junction capacitance (NOTE 2)  
35  
CJ  
pF  
K/W  
C
10  
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
RθJA  
85  
TJ,TSTG  
-55 to +150  
Note:  
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  

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