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ERJ-1GNJ222C PDF预览

ERJ-1GNJ222C

更新时间: 2024-10-16 02:52:43
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 376K
描述
Airfast Power Amplifier Module

ERJ-1GNJ222C 数据手册

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A3M34TL139  
Airfast Power Amplifier Module  
Rev. 0 — June 2021  
Data Sheet: Technical Data  
The A3M34TL139 is a fully integrated Doherty power amplifier module  
designed for wireless infrastructure applications that demand high  
performance in the smallest footprint. Ideal for applications in massive MIMO  
systems, outdoor small cells and low power remote radio heads. The  
field--proven LDMOS power amplifiers are designed for TDD and FDD LTE  
systems.  
A3M34TL139  
3300–3580 MHz  
3300–3580 MHz, 28 dB, 7 W Avg.  
AIRFAST POWER AMPLIFIER  
MODULE  
Typical LTE Performance: Pout = 7 W Avg., VDD = 27 Vdc, 1 20 MHz LTE,  
Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)  
Carrier Center  
Frequency  
Gain  
(dB)  
ACPR  
(dBc)  
PAE  
(%)  
3310 MHz  
3440 MHz  
3570 MHz  
28.0  
27.7  
27.4  
–25.6  
–28.2  
–30.8  
37.8  
39.8  
38.8  
1. All data measured with device soldered in NXP reference circuit.  
Features  
Frequency: 3300–3580 MHz  
Advanced high performance in--package Doherty  
Fully matched (50 ohm input/output, DC blocked)  
10 mm 6 mm Module  
Designed for low complexity analog or digital linearization systems  
NXP reserves the right to change the detail specifications as may be required to permit  
improvements in the design of its products.  

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