Datasheet > EPD-1300-0-3.0

EPD-1300-0-3.0

更新时间： 2022-12-18 00:40:25

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	56K
描述
Photodiode

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EPD-1300-0-3.0 数据手册

Photodiode

EPD-1300-0-3.0

Preliminary

6/21/2007

rev. 04/07

Type

Technology

InGaAs/InP

Case

Wavelength

Infrared

Planar

TO-39

Description

InGaAs-Photodiode mounted in TO-39

standard package . High spectral

sensitivity in the infrared range (NIR ,

SWIR) due to large active area.

3,25 ^{± 0,1}

Chip Location

Applications

Anode

Optical communications,

safety equipment, light barriers

13,5 ^{± 1,0}

2,00 ^{± 0,05}

Chip Location

ELC-70

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

Unit

Active area

7.0

7.4

mm²

%/K

°C

T_C(I_D)

T_amb

T_stg

Temperature coefficient

Operating temperature range

Storage temperature range

-40 to +85

-40 to +100

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Parameter

Test conditions

I_F= 10 mA

Symbol

Min

Typ

0.6

Max

Unit

V_F

V_R

Forward voltage

Breakdown voltage²⁾

I_R= 10 µA

V_R= 0 V

Sensitivity range at 10 %

800

1750

ꢀλ_0,5

S_λ

V_R= 0 V

Spectral bandwidth at 50 %

680

0.9

Responsivity at 1300 nm¹⁾

Dark current

V_R= 0 V

A/W

V_R= 5 V

I_D

V_R= 10 mV

R_SH

NEP

Shunt resistance

Mꢁ

W/ Hz

5.2x10^-14

5.1x10¹²

1000

Noise equivalent power

Specific detectivity

Junction capacitance

λ = 1300 nm

V_R= 0 V

cm Hz W ⁻¹

C_J

1300

V_R= 0 V

E_e= 1mW/cm²

Photo current at 1300 nm²⁾

I_Ph

µA

¹⁾measured on bare chip

²⁾for information only

Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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