Datasheet > EPD-150-0/3.6

EPD-150-0/3.6

更新时间： 2024-11-20 21:18:19

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描述
Photo Diode

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技术参数
数据手册

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EPD-150-0/3.6 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

EPD-150-0/3.6 数据手册

GaP – UV-Photodiodes (150 - 550 nm)

Schottky barrier type

EPD-150-0

Description

Wide bandwidth and high spectral sensitivity in

the UV and visible ranges (150 nm - 550 nm),

low cost, chip based on GaP, large active areas

EPD-150-0

0,1

are possible

Applications

Medical engineering (dermatology), output check

of UV - lamps and gas burner flame, measure-

ment and control of ecological parameters, ra-

diation control for a solarium, UV water purifica-

tion facilities

0,01

Features

1E-3

100 150 200 250 300 350 400 450 500 550 600

Wavelength, nm

Mounted in hermetically sealed TO-packages

with sapphire window, different active areas are

available

Parameter

Units

Symbol

EPD-150-0/2.5

EPD-150-0/3.6

Chip sizes

Active area

2.46 x 2.46

4.8

3.56 x 3.56

10.9

mm²

I_D

Max. dark current at

V_R= 0,01V

V_R= 1V

Package

TO-39

Spectral range at 0,01 maximum

Spectral bandwidth at 50%

Peak sensitivity wavelength

Typical responsivity at l _p

Temperature coefficient of I_D

150 – 550 (with sapphire window)

l _min-l _max

180

440

Dl _0,5

l _p

A/W

times/K

S_ë

0.12

1.07

TCI_D

Typical rise and fall time at

V_R= 5V and 50 W load

t_r

t_f

140

Maximal reverse voltage at

I_R=100 µA

V_R

T_amb

T_stg

Operating temperature range

Storage temperature range

°C

-40 to +125

rev.06/01

ROITHNER LASERTECHNIK A-1040 Vienna, Austria, Schönbrunner Straße 7, Tel.: +43 1 586 52 43, office@roithner-laser.com

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