Datasheet > EPD-1300-5-0.2

EPD-1300-5-0.2

更新时间： 2022-12-18 00:40:25

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	49K
描述
Photodiode

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EPD-1300-5-0.2 数据手册

Photodiode

EPD-1300-5-0.2

Preliminary

6/21/2007

rev. 06/07

Type

Technology

InGaAs/InP

Case

Wavelength

Infrared

Planar

5 mm plastic lens

Description

InGaAs-Photodiode mounted in standard 5 mm

package without standoff . High spectral

sensitivity in the infrared range (NIR, SWIR).

9,15

5,75 _{- 0,3}

Anode

Note: Special packages with standoff available on request

Applications

1,5

0,6 _{- 0,2}

Ø 5

Optical communications,

safety equipment, light barriers

± 1,0

36,5

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

Unit

Active area

0.032

7.4

mm²

%/K

°C

T_C(I_D)

T_amb

T_stg

Temperature coefficient

Operating temperature range

Storage temperature range

-40 to +85

-40 to +100

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Parameter

Test conditions

I_F= 10 mA

Symbol

Min

Typ

1.7

Max

Unit

V_F

V_R

Forward voltage

Breakdown voltage²⁾

I_R= 10 µA

V_R= 0 V

Sensitivity range at 10 %

800

1750

200

A/W

Gꢁ

ꢀλ_0,5

S_λ

V_R= 0 V

Spectral bandwidth at 50 %

680

0.9

Responsivity at 1300 nm¹⁾

Dark current

V_R= 0 V

V_R= 5 V

I_D

V_R= 10 mV

R_SH

NEP

Shunt resistance

4.0x10^-15

4.5x10¹²

W/ Hz

cm Hz W ⁻¹

Noise equivalent power

Specific detectivity

Junction capacitance

λ =1300 nm

λ = 1300 nm

V_R= 0 V

C_J

V_R= 0 V

E_e= 1mW/cm²

I_Ph

Photo current at 1300 nm*

0.95

µA

¹⁾measured on bare chip

²⁾for information only

Note: All measurements carried out with EPIGAP equipment

Labeling

RD (typ.) [Gꢁ]

Quantity

Type

Lot N°

EPD-1300-5-0.2

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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