Datasheet > EPA480C-CP083

EPA480C-CP083

更新时间： 2024-11-16 06:57:39

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	33K
描述
High Efficiency Heterojunction Power FET

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EPA480C-CP083 数据手册

Excelics

EPA480C-CP083

PRELIMINARY DATA SHEET

High Efficiency Heterojunction Power FET

NON-HERMETIC SURFACE MOUNT 160MIL METAL

CERAMIC PACKAGE

+35.5dBm TYPICAL OUTPUT POWER

17.5dB TYPICAL POWER GAIN AT 2GHz

0.4 X 4800 MICRON RECESSED

“MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

All Dimensions In Mils

Tolerance ±3

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

34.0

35.5

17.5

12.5

dBm

f= 4GHz

f= 2GHz

f= 4GHz

16.0

G_1dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=2GHz

Saturated Drain Current Vds=3V, Vgs=0V

880

960

1440

1880

-2.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

1560

-1.0

-15

Vds=3V, Ids=14mA

Drain Breakdown Voltage Igd=4.8mA

Source Breakdown Voltage Igs=4.8mA

Thermal Resistance (Au-Sn Eutectic Attach)

-11

-7

BVgd

BVgs

Rth

-14

12*

^oC/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-3V

Idss

1.2A

Forward Gate Current

Input Power

240mA

33dBm

175^oC

40mA

Igsf

Tch

Tstg

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

11.4 W

9.5 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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