Datasheet > EPA480C-SOT89

EPA480C-SOT89

更新时间： 2024-11-15 22:27:51

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页数	文件大小	规格书
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描述
DC-6GHz High Efficiency Heterojunction Power FET

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EPA480C-SOT89 数据手册

EPA480C-SOT89

Excelics

DATA SHEET

DC-6GHz High Efficiency Heterojunction Power FET

Features

•

LOW COST SURFACE-MOUNT PLASTIC PACKAGE

+36dBm TYPICAL OUTPUT POWER

13.0dB TYPICAL POWER GAIN AT 2GHz

0.5dB TYPICAL NOISE FIGURE AT 2GHz

+43dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT

POINT AT 2GHz

•

0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES EXTRA HIGH POWER EFFICIENCY

AND HIGH RELIABILITY

Applications

(Top View)

All Dimensions In Mils

•

Analog and Digital Wireless System

High Dynamic Range LNA

HPA

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

dBm

Output Power at 1dB Compression

f = 2GHz

P_1dB

Vds=8V, Ids=750mA

Gain at 1dB Compression

Vds=8V, Ids=750mA

34.5

11.0

36.0

13.0

f = 2GHz

G_1dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=750mA

f = 2GHz

Noise Figure

f = 2GHz

Vds=5V, Ids=300mA

Vds=5-8V, Ids=750mA

Output 3rd Order Intercept Point

Vds=5-8V, Ids=750mA

Vds=5V, Ids=300mA

0.5

1.2

f = 2GHz

1440

dBm

IP3

Saturated Drain Current Vds=3V, Vgs=0V

880

960

1880

-2.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

1560

-1.0

-15

Vds=3V, Ids=14mA

Drain Breakdown Voltage Igd=4.8mA

Source Breakdown Voltage Igs=4.8mA

Thermal Resistance

-11

-7

BVgd

BVgs

Rth

-14

14*

^oC/W

* Overall Rth depends on case mounting

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

-8V

-3V

Vgs

Idss

1.05A

Ids

Forward Gate Current

Input Power

240mA

33dBm

175^oC

-65/175^oC

10 W

40mA

Igsf

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

Tstg

8.4 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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