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EPA120D PDF预览

EPA120D

更新时间: 2024-11-05 06:57:31
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
2页 46K
描述
High Efficiency Heterojunction Power FET

EPA120D 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

EPA120D 数据手册

 浏览型号EPA120D的Datasheet PDF文件第2页 
EPA120D  
UPDATED 01/13/2006  
High Efficiency Heterojunction Power FET  
FEATURES  
+29.5dBm TYPICAL OUTPUT POWER  
19.5dB TYPICAL POWER GAIN AT 2GHz  
0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION AND PLATED HEAT SINK  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
Idss SORTED IN 30mA PER BIN RANGE  
Chip Thickness: 75 ± 20 microns  
All Dimensions In Microns  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Output Power at 1dB Compression  
f= 2GHz  
f= 4GHz  
f= 2GHz  
f= 4GHz  
28.0  
29.5  
29.5  
19.5  
14.5  
P1dB  
dBm  
Vds=8V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=8V, Ids=50% Idss  
Power Added Efficiency at 1dB Compression  
Vds=8V, Ids=50% Idss  
18.0  
G1dB  
PAE  
dB  
f=2GHz  
50  
%
Idss  
Gm  
Saturated Drain Current  
Vds=3V, Vgs=0V  
Vds=3V, Vgs=0V  
Vds=3V,Ids=3.6mA  
Igd=1.2mA  
210  
240  
360  
510  
-2.5  
mA  
Transconductance  
380  
-1.0  
-15  
-14  
40  
mS  
V
Vp  
Pinch-off Voltage  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage  
Source Breakdown Voltage  
-13  
-7  
V
Igs=1.2mA  
V
Thermal Resistance (Au-Sn Eutectic Attach)  
45  
oC/W  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
Vds  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reserve Gate Current  
Input Power  
ABSOLUTE1  
12V  
CONTINUOUS2  
8V  
Vgs  
-5V  
-3V  
Igsf  
5.4 mA  
0.9 mA  
26 dBm  
175oC  
1.8 mA  
0.3 mA  
Igsr  
Pin  
@ 3dB Compression  
175oC  
Tch  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tstg  
Pt  
-65/175oC  
-65/175oC  
3.3 W  
3.3 W  
Note:  
1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 2  
Revised January 2006  

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