Datasheet > EO1804PPAS-1

EO1804PPAS-1

更新时间： 2024-11-21 06:57:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	100K
描述
Photoelectrics Diffuse-reflective

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中文翻译

获取价格

数据手册

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EO1804PPAS-1 数据手册

Photoelectrics

Diffuse-reflective

Type EO1804.PAS, DC, Metal-housing

• Range: 400 mm adjustable

• Modulated, infrared light

• Supply voltage: 10 to 40 VDC

• Output: 200 mA NPN or PNP

• Make and break switching function, LED indication

• Protection: Reverse polarity, short-circuit, transients

• High immunity to ambient light

• Heavy duty M18 metal housing, IP67

• Cable and plug versions

Product Description

Ordering Key

EO 18 04 NPA S-1

The EO1804 is a family of sensing performance. The Type

general purpose Diffuse- sensors are easy to adjust Housing diameter

reflective sensors in a short with 270° single turn poten- Range

M18 metal housing for tiometer. The output is a 4- Output type

heavy duty applications. wire complementary (NO Housing material

They are useful for simple and NC) output in NPN (cur- Connection type

applications where a basic rent sinking) or PNP (current

sensor provides adequate souring).

Type Selection

Housing

diameter

Rated

operating

dist. (S_n)

Ordering no.

PNP/cable

Ordering no.

PNP/plug

NPN/cable

NPN/plug

Make & break swit.

Make & break swit. Make & break swit.

M18

400 mm

EO 1804 NPAS

EO 1804 NPAS-1

EO 1804 PPAS EO 1804 PPAS-1

Specifications

Rated operating dist. (S_n)

Adjustable

Light type

Infrared,

modulated synchronized

25° at ¹/₂range

Up to 400 mm

Reference target:

Kodak test card R27, white,

90% reflectivity

200 x 200 mm

Sensing angle

Ambient light

Operating frequency (f)

Max. 10,000 lux

120 Hz, light/dark ratio 1:2

Response time

Sensitivity

Temperature drift

Hysteresis (H)

(Differential travel)

270° turn potentiometer

0.4%/K

OFF-ON (t_ON

)

≤ 3.2 ms

≤ 5 ms

ON-OFF (t_OFF

)

Power ON delay (t_V)

Indication function

Typ. 100 ms

3 to 20%

Dark and light

(complementary switch)

LED, yellow

Rated operational volt. (U_B)

Ripple (U_rpp

10 to 40 VDC (ripple included)

Max. 10%

)

Output ON

Output current

Continuous (I_e)

Short-time (I)

Environment

Overvoltage category

Pollution degree

Max. 200 mA

200 mA,

max. load capacity 100 nF

III (IEC 60664/60664A; 60947-1)

3 (IEC 60664/60664A; 60947-1)

IP 67 (IEC 60529; 60947-1)

Degree of protection

No load supply current (I_O)

Min. operational current (I_m) 0.5 mA

OFF-state current (I_r)

Voltage drop (U_d)

Protection

Max. 20 mA

Temperature

Operating

Storage

-20° to +60°C (-4° to 140°F)

-30° to + 70°C (-22° to 158°F)

Max. 100 μA

Max. 2.5 V @ 200 mA

Vibration

10 to 150 Hz, 0.5 mm/7.5 g

(IEC 60068-2-6)

Reverse polarity, short circuit,

transients

Shock

2 x 1 m & 100 x 0.5 m

(IEC 60068-2-32)

Transient voltage

Light source

Max. 1 kV/0.5 J

Dielectric voltage

500 VAC (IEC 60365-4-41)

GaAlAs LED, 880 nm

Specifications are subject to change without notice (08.02.06)

中文翻译

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EOAR0005DR025H9	RESI	获取价格	该系列采用开步集团自研自制合金材料和真空电子束焊技术，使得产品具有低温飘和高精度的特点，无
EOAR0005FR025H9	RESI	获取价格	该系列采用开步集团自研自制合金材料和真空电子束焊技术，使得产品具有低温飘和高精度的特点，无
EOAR0005JR025H9	RESI	获取价格	该系列采用开步集团自研自制合金材料和真空电子束焊技术，使得产品具有低温飘和高精度的特点，无
EOB1UV6411-60TG-S	FUJITSU	获取价格	EDO DRAM Module, 1MX64, 60ns, CMOS, PDMA144
EOB1UV6411-70TG-S	FUJITSU	获取价格	EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA144
EOB1UV6414-70TG-S	FUJITSU	获取价格	EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA144
EOB2UV6482-60TG-S	FUJITSU	获取价格	EDO DRAM Module, 2MX64, 60ns, CMOS, PDMA144
EOB2UV6482-70TG-S	FUJITSU	获取价格	EDO DRAM Module, 2MX64, 70ns, CMOS, PDMA144
EOB2UV6482B-60TG-S	FUJITSU	获取价格	EDO DRAM Module, 2MX64, 60ns, CMOS, PDMA144
EOC-20HD100	ETC	获取价格	HIGH-POWER CHIPLED - EOC - 20 SERIES

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