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ENA0935A PDF预览

ENA0935A

更新时间: 2024-11-06 12:51:15
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 420K
描述
General-Purpose Switching Device Applications

ENA0935A 数据手册

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Ordering number : ENA0935A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
ECH8652  
Features  
Low ON-resistance  
Halogen free compliance  
1.8V drive  
Protection diode in  
Composit type, facilitating high-density mounting  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--12  
±10  
-- 6  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
When mounted on ceramic substrate (900mm2 0.8mm)  
--40  
1.3  
A
μ
DP  
Allowable Power Dissipation  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
P
P
W
W
°C  
°C  
×
D
T
1.5  
×
Tch  
150  
Tstg  
--55 to +150  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: ECH8  
7011A-001  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3,000 pcs./reel  
ECH8652-TL-H  
Top View  
2.9  
Packing Type : TL  
Marking  
0.15  
8
5
WX  
0 to 0.02  
TL  
LOT No.  
4
1
Electrical Connection  
0.65  
0.3  
8
7
6
5
1 : Source1  
2 : Gate1  
3 : Source2  
4 : Gate2  
5 : Drain2  
6 : Drain2  
7 : Drain1  
8 : Drain1  
1
2
3
4
SANYO : ECH8  
Bottom View  
http://semicon.sanyo.com/en/network  
62012 TKIM/O0108PE TIIM TC-00001630  
No. A0935-1/7  

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