Datasheet > EN39LV010_11

EN39LV010_11

更新时间： 2024-11-23 11:44:55

品牌	Logo	应用领域
EON		/
页数	文件大小	规格书
36页	395K
描述
1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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EN39LV010_11 数据手册

EN39LV010

1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector,

CMOS 3.0 Volt-only Flash Memory

FEATURES

• Single power supply operation

• High performance program/erase speed

- Byte program time: 8µs typical

- Sector erase time: 90ms typical

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations for high performance

3.3 volt microprocessors.

• JEDEC Standard program and erase

commands

• JEDEC standard

feature

polling and toggle bits

DATA

• High performance

- Full voltage range: access times as fast as 70

• Single Sector and Chip Erase

- Regulated voltage range: access times as fast

as 45ns

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 μA typical standby current (standard access

time to active mode)

• triple-metal double-poly triple-well CMOS Flash

Technology

• Low Vcc write inhibit < 2.5V

• Flexible Sector Architecture:

- Thirty-two 4 Kbyte sectors

• Minimum 100K program/erase endurance

cycles

• Sector protection:

• Package options

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 4mm x 6mm 34-ball WFBGA

- 8mm x 14mm 32-pin TSOP (Type 1)

- 32-pin PLCC

• Industrial Temperature Range

GENERAL DESCRIPTION

The EN39LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 131,072 bytes. Any byte can be programmed typically in 8µs.The EN39LV010

features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the

need for WAIT states in high-performance microprocessor systems.

The EN39LV010 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2011/10/27

12 3 4 5 6 7...36

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与EN39LV010_11相关器件

型号	品牌	获取价格	描述	数据表
EN39LV010-45RJI	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-45RJIP	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-45RNI	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-45RNIP	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-45RSI	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-45RSIP	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-70JI	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-70JIP	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-70NI	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN39LV010-70NIP	EON	获取价格	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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