Datasheet > EN39SL160AL-70BIP

EN39SL160AL-70BIP

更新时间： 2024-11-26 11:44:55

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
50页	519K
描述
16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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EN39SL160AH/L

16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform

Sector, CMOS 1.8 Volt-only

FEATURES

• Single power supply operation

- Full voltage range:1.65-1.95 volt for read and

write operations.

• High performance program/erase speed

- Word program time: 8µs typical

- Sector erase time: 90ms typical

- Block erase time: 180ms typical

- Chip erase time: 4s typical

- Ideal for battery-powered applications.

• High performance

- Access times as fast as 70 ns

• JEDEC Standard Embedded Erase and

Program Algorithms

• Low power consumption (typical values at 5

MHz)

• JEDEC standard DATA# polling and toggle

- 5 mA typical active read current

- 15 mA typical program/erase current

- 0.2 μA typical standby current

bits feature

• Single Sector, Block and Chip Erase

• Chip Unprotect Mode

• Uniform Sector Architecture:

- 512 sectors of 2-Kword

- 32 blocks of 32-Kword

• Erase Suspend / Resume modes:

Read or program another Sector/Block during

Erase Suspend Mode

- Any sector or block can be erased individually

• WP#/ACC Input pin:

• Low Vcc write inhibit < 1.2V

- Write protect (WP#) function allows protection

the first or last blocks, regardless of block

protect status

• Minimum 100K endurance cycle

• Package Options

- Acceleration (ACC) function acceleration

program timing.

- 48-ball 6mm x 8mm TFBGA

- 48-ball 4mm x 6mm WFBGA

• Block Group protection:

• Industrial temperature Range

- Hardware locking of blocks to prevent

program or erase operations within individual

blocks

- Additionally, temporary Block Unprotect

allows code changes in previously locked

blocks.

GENERAL DESCRIPTION

The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L

features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for

WAIT statements in high-performance microprocessor systems.

The EN39SL160AH/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block

or full chip erase operation, where each block can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. C, Issue Date: 2011/09/15

12 3 4 5 6 7...50

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与EN39SL160AL-70BIP相关器件

型号	品牌	获取价格	描述	数据表
EN39SL160AL-70NAP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160AL-70NIP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160AL-90BAP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160AL-90BIP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160AL-90NAP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160AL-90NIP	EON	获取价格	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL160H	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS
EN39SL160H-70BI	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS
EN39SL160H-70BIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS
EN39SL160H-70NI	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS

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