Datasheet > EN29LV512

EN29LV512

更新时间： 2024-01-12 17:58:15

品牌	Logo	应用领域
EON		/
页数	文件大小	规格书
35页	401K
描述
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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EN29LV512 数据手册

EN29LV512

da0.

512 Kbit (64K x 8-bit ) Uniform Sector,

CMOS 3.0 Volt-only Flash Memory

FEATURES

• Single power supply operation

• High performance program/erase speed

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations for high performance

3.3 volt microprocessors.

- Byte program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard program and erase

commands

• JEDEC standard

polling and toggle bits

DATA

• High performance

feature

- Full voltage range: access times as fast as 55

• Single Sector and Chip Erase

- Regulated voltage range: access times as fast

as 45ns

• Embedded Erase and Program Algorithms

• Low power consumption (typical values at 5

MHz)

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• triple-metal double-poly triple-well CMOS Flash

Technology

• Low Vcc write inhibit < 2.5V

• Flexible Sector Architecture:

- Four 16 Kbyte sectors

• >100K program/erase endurance cycle

- Supports full chip erase

• Package options

- Individual sector erase supported

- Sector protection and unprotection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 8mm x 20mm 32-pin TSOP (Type 1)

- 8mm x 14mm 32-pin TSOP (Type 1)

- 32-pin PLCC

• Commercial and industrial Temperature Range

GENERAL DESCRIPTION

The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized

as 65,536 bytes. Any byte can be programmed typically in 8µs. The EN29LV512 features 3.0V

voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT

states in high-performance microprocessor systems.

The EN29LV512 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

Rev. B, Issue Date: 2004/01/05

or modifications due to changes in technical specifications.

12 3 4 5 6 7...35

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与EN29LV512相关器件

型号	品牌	获取价格	描述	数据表
EN29LV512-45RJC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RTC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RTCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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