Datasheet > 存储 > 闪存> EN29LV512-55SCP

EN29LV512-55SCP

更新时间： 2024-01-22 11:51:07

品牌	Logo	应用领域
EON		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
35页	401K
描述
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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EN29LV512-55SCP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TSSOP, TSSOP32,.8,20	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
最长访问时间：	55 ns	命令用户界面：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G32
内存密度：	524288 bit	内存集成电路类型：	FLASH
内存宽度：	8	部门数/规模：	4
端子数量：	32	字数：	65536 words
字数代码：	64000	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
电源：	3/3.3 V	认证状态：	Not Qualified
部门规模：	16K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
Base Number Matches：	1

EN29LV512-55SCP 数据手册

EN29LV512

da0.

512 Kbit (64K x 8-bit ) Uniform Sector,

CMOS 3.0 Volt-only Flash Memory

FEATURES

• Single power supply operation

• High performance program/erase speed

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations for high performance

3.3 volt microprocessors.

- Byte program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard program and erase

commands

• JEDEC standard

polling and toggle bits

DATA

• High performance

feature

- Full voltage range: access times as fast as 55

• Single Sector and Chip Erase

- Regulated voltage range: access times as fast

as 45ns

• Embedded Erase and Program Algorithms

• Low power consumption (typical values at 5

MHz)

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• triple-metal double-poly triple-well CMOS Flash

Technology

• Low Vcc write inhibit < 2.5V

• Flexible Sector Architecture:

- Four 16 Kbyte sectors

• >100K program/erase endurance cycle

- Supports full chip erase

• Package options

- Individual sector erase supported

- Sector protection and unprotection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 8mm x 20mm 32-pin TSOP (Type 1)

- 8mm x 14mm 32-pin TSOP (Type 1)

- 32-pin PLCC

• Commercial and industrial Temperature Range

GENERAL DESCRIPTION

The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized

as 65,536 bytes. Any byte can be programmed typically in 8µs. The EN29LV512 features 3.0V

voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT

states in high-performance microprocessor systems.

The EN29LV512 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

Rev. B, Issue Date: 2004/01/05

or modifications due to changes in technical specifications.

12 3 4 5 6 7...35

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与EN29LV512-55SCP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV512-55SI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-55SIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-55TC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-55TCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-55TI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-55TIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-70JC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-70JCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-70JI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-70JIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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