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EN25P10-100GC PDF预览

EN25P10-100GC

更新时间: 2024-01-14 15:49:42
品牌 Logo 应用领域
EON 闪存存储
页数 文件大小 规格书
31页 386K
描述
1 Mbit Uniform Sector, Serial Flash Memory

EN25P10-100GC 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

EN25P10-100GC 数据手册

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EN25P10  
To enter the Hold condition, the device must be selected, with Chip Select (CS#) Low. The Hold condition  
starts on the falling edge of the Hold (HOLD) signal, provided that this coincides with Serial Clock (CLK)  
being Low (as shown in Figure 4.).  
The Hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this coincides with  
Serial Clock (CLK) being Low.  
If the falling edge does not coincide with Serial Clock (CLK) being Low, the Hold condition starts after  
Serial Clock (CLK) next goes Low. Similarly, if the rising edge does not coincide with Serial Clock (CLK)  
being Low, the Hold condition ends after Serial Clock (CLK) next goes Low. (This is shown in Figure 4.).  
During the Hold condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI) and  
Serial Clock (CLK) are Don’t Care.  
Normally, the device is kept selected, with Chip Select (CS#) driven Low, for the whole duration of the  
Hold condition. This is to ensure that the state of the internal logic remains unchanged from the moment  
of entering the Hold condition.  
If Chip Select (CS#) goes High while the device is in the Hold condition, this has the effect of resetting the  
internal logic of the device. To restart communication with the device, it is necessary to drive Hold (HOLD)  
High, and then to drive Chip Select (CS#) Low. This prevents the device from going back to the Hold  
condition.  
Figure 4. Hold Condition Waveform  
INSTRUCTIONS  
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial  
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is driven  
Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on  
Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).  
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction code.  
Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or  
none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has been shifted  
in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read), Read  
Status Register (RDSR) or Release from Deep Power-down, and Read Device ID (RDI) instruction, the  
shifted-in instruction sequence is followed by a data-out sequence. Chip Select (CS#) can be driven High  
after any bit of the data-out sequence is being shifted out.  
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register (WRSR),  
Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip Select (CS#)  
must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed.  
That is, Chip Select (CS#) must driven High when the number of clock pulses after Chip Select (CS#)  
being driven Low is an exact multiple of eight.  
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase  
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues  
unaffected.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
7
Rev. C, Issue Date: 2007/5/4  

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