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EN25P16 PDF预览

EN25P16

更新时间: 2024-01-22 06:27:38
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
32页 441K
描述
16 Mbit Uniform Sector, Serial Flash Memory

EN25P16 数据手册

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EN25P16  
EN25P16  
16 Mbit Uniform Sector, Serial Flash Memory  
FEATURES  
Software and Hardware Write Protection:  
- Write Protect all or portion of memory via  
software  
Single power supply operation  
- Full voltage range: 2.7-3.6 volt  
16 Mbit Serial Flash  
- Enable/Disable protection with WP# pin  
- 16 M-bit/2048 K-byte/8192 pages  
- 256 bytes per programmable page  
High performance program/erase speed  
- Byte program time: 7µs typical  
- Page program time: 1.5ms typical  
- Sector erase time: 800ms typical  
- Chip erase time: 18 Seconds typical  
High performance  
- 75MHz clock rate  
Low power consumption  
- 5 mA typical active current  
Minimum 100K endurance cycle  
- 1 μA typical power down current  
Package Options  
- 8 pins SOP 200mil body width  
- 8 contact VDFN  
- 16 pin SOP 300mil body width  
- All Pb-free packages are RoHS compliant  
Uniform Sector Architecture:  
- Thirty two 64-Kbyte sectors  
Commercial and industrial temperature Range  
GENERAL DESCRIPTION  
The EN25P16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to  
256 bytes at a time, using the Page Program instruction.  
The EN25P16 is designed to allow either single Sector at a time or full chip erase operation. The  
EN25P16 can be configured to protect part of the memory as the software protected mode. The device  
can sustain a minimum of 100K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. C, Issue Date: 2006/12/25  

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