Datasheet > EMVY500ADA221MJA0G

EMVY500ADA221MJA0G

更新时间： 2024-11-25 03:18:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
15页	569K
描述
RF Power Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMVY500ADA221MJA0G 数据手册

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第2页

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第3页

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第4页

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第5页

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第6页

浏览型号EMVY500ADA221MJA0G的Datasheet PDF文件第7页

Document Number: MRFE6S9045N

Rev. 0, 10/2007

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRFE6S9045NR1

Designed for broadband commercial and industrial applications with fre-

quencies up to 1000 MHz. The high gain and broadband performance of this

device makes it ideal for large-signal, common-source amplifier applications

in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD= 28 Volts,

880 MHz, 10 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

BROADBAND

_DQ= 350 mA, P_out= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.1 dB

Drain Efficiency — 32%

RF POWER MOSFET

ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 350 mA,

_out= 16 Watts Avg., Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

CASE 1265-09, STYLE 1

TO-270-2

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

PLASTIC

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 350 mA, P_out= 45 Watts,

Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

- 0.5, +66

- 0.5, +12

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Maximum Operation Voltage

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 45 W CW

Case Temperature 79°C, 10 W CW

°C/W

1.0

1.1

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators

by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRFE6S9045NR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

下载PDF

与EMVY500ADA221MJA0G相关器件

型号	品牌	获取价格	描述	数据表
EMVY500ADA2R2MD55G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA330MF80G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA3R3MD55G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA470MF80G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA470MF80G	FREESCALE	获取价格	RF Power Field Effect Transistor
EMVY500ADA4R7ME55G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA680MHA0G	CHEMI-CON	获取价格	SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS
EMVY500ADA680MHZ0G	TI	获取价格	ISO5500EVM
EMVY500ARA100MF55G	CHEMI-CON	获取价格	105℃ SMD Aluminum Electrolytic Capacitors MVY
EMVY500ARA101MHA0G	CHEMI-CON	获取价格	105℃ SMD Aluminum Electrolytic Capacitors MVY

与EMVY500ADA221MJA0G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

41
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

EMVY500ADA221MJA0G

EMVY500ADA221MJA0G 数据手册

与EMVY500ADA221MJA0G相关器件

与EMVY500ADA221MJA0G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EMVY500ADA221MJA0G

EMVY500ADA221MJA0G 数据手册

与EMVY500ADA221MJA0G相关器件

与EMVY500ADA221MJA0G相关文章

您还可以找

您在本页遇到什么问题？