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EMVY500ADA470MF80G PDF预览

EMVY500ADA470MF80G

更新时间: 2024-01-16 08:04:59
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体电容器晶体管功率场效应晶体管射频
页数 文件大小 规格书
11页 492K
描述
RF Power Field Effect Transistor

EMVY500ADA470MF80G 数据手册

 浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第2页浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第3页浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第4页浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第5页浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第6页浏览型号EMVY500ADA470MF80G的Datasheet PDF文件第7页 
Document Number: MRF6P27160H  
Rev. 2, 12/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
Designed for CDMA base station applications with frequencies from 2600 to  
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.  
To be used in Class AB and Class C for WLL applications.  
MRF6P27160HR6  
Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ  
=
1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS-95 CDMA (Pilot, Sync,  
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,  
PAR = 9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 14.6 dB  
Drain Efficiency — 22.6%  
ACPR @ 885 kHz Offset — -47.8 dBc in 30 kHz Bandwidth  
2600-2700 MHz, 35 W AVG., 28 V  
SINGLE N-CDMA  
LATERAL N-CHANNEL  
RF POWER MOSFET  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW  
Output Power  
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth  
Applications  
RoHS Compliant  
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.  
CASE 375D-05, STYLE 1  
NI-1230  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +68  
-0.5, +12  
- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Storage Temperature Range  
Case Operating Temperature  
V
DSS  
V
GS  
T
stg  
T
C
°C  
(1,2)  
Operating Junction Temperature  
T
J
225  
°C  
Table 2. Thermal Characteristics  
Characteristic  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 79°C, 160 W CW  
Case Temperature 71°C, 35 W CW  
R
°C/W  
θ
JC  
0.29  
0.31  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.  

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