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EMT1DXV6T5 PDF预览

EMT1DXV6T5

更新时间: 2024-11-04 06:57:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 52K
描述
Dual General Purpose Transistor

EMT1DXV6T5 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:CASE 463A-01, 6 PIN针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.32最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

EMT1DXV6T5 数据手册

 浏览型号EMT1DXV6T5的Datasheet PDF文件第2页浏览型号EMT1DXV6T5的Datasheet PDF文件第3页浏览型号EMT1DXV6T5的Datasheet PDF文件第4页 
EMT1DXV6T1,  
EMT1DXV6T5  
Dual General Purpose  
Transistor  
PNP Dual  
http://onsemi.com  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT−563 which is designed for low  
power surface mount applications.  
(3)  
(2)  
(1)  
Q
Features  
Q
1
2
Lead−Free Solder Plating  
Low V  
, t0.5 V  
CE(SAT)  
These are Pb−Free Devices  
(4)  
(5)  
(6)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
−60  
Unit  
V
6
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
1
−50  
V
−6.0  
−100  
V
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
I
mAdc  
C
SOT−563  
CASE 463A  
STYLE 1  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
mW  
D
MARKING DIAGRAM  
T = 25°C  
A
357  
(Note 1)  
2.9  
mW/°C  
Derate above 25°C  
(Note 1)  
Thermal Resistance,  
Junction-to-Ambient  
R
350  
(Note 1)  
°C/W  
q
JA  
3T M G  
G
Characteristic  
(Both Junctions Heated)  
1
Symbol  
Max  
Unit  
Total Device Dissipation  
P
mW  
D
T = 25°C  
A
500  
(Note 1)  
4.0  
mW/°C  
3T = Specific Device Code  
Derate above 25°C  
M
= Month Code  
(Note 1)  
G
= Pb−Free Package  
Thermal Resistance,  
Junction-to-Ambient  
R
250  
(Note 1)  
°C/W  
°C  
q
JA  
(Note: Microdot may be in either location)  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 1  
EMT1DXV6T1/D  
 

EMT1DXV6T5 替代型号

型号 品牌 替代类型 描述 数据表
EMT1DXV6T5G ONSEMI

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