EMS101-P
UPDATED 03/31/2008
DC-6GHz GaAs MMIC SPDT SWITCH
FEATURES
z
z
z
z
z
z
z
BROADBAND PERFORMANCE
HIGH ISOLATION
LOW INSERTION LOSS
LOW DC POWER CONSUMPTION
FAST SWITCHING SPEED
SI3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH RELIABILITY
Caution! ESD sensitive device.
DESCRIPTION
The EMS101-P is a GaAs IC single pole double throw broadband RF switch. It can be used for broadband
communications and instrument application. This device is packaged in a SO-8 surface mount package and
internally it can be terminated with 50ohm load or short circuit based on requirement .The switch is controlled by
the application of 0V/-5V signals to the control lines in accordance with the truth table below.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
PARAMETERS/TEST CONDITIONS
Operating frequency Range
MIN
TYP
MAX
UNIT
SYMBOL
F
DC
6
GHz
dBm
dBm
dB
0/-5V Control; 50MHz
0/-5V Control; 2GHz
(DC-3GHz)
20
26
1
P1dB
Ls
Input Power at 1dB Gain compression
Insertion Loss
1.5
2
(3-6GHz)
1.5
30
25
1.8
1.8
3
dB
Isolation
(DC-3GHz)
32
28
dB
ISO
(3-6GHz)
dB
VSWR in Input VSWR
VSWR out Output VSWR
T
Switching Speed (50% control to 10%/90%RF)
8
nS
Note:
1. VSWR measured in low loss switch state
2. P1dB measured input power at which insertion loss compressed by 1dB
3. All measurement made in a 50Ohm system
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised March 2008