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EM6AA160TSA-4G PDF预览

EM6AA160TSA-4G

更新时间: 2022-12-28 03:30:51
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
54页 431K
描述
16M x 16 bit DDR Synchronous DRAM (SDRAM)

EM6AA160TSA-4G 数据手册

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EtronTech  
EM6AA160TSA  
Addressing Mode Select Field (A3)  
The Addressing Mode can be one of two modes, either Interleave Mode or Sequential Mode. Both Sequential  
Mode and Interleave Mode support burst length of 2, 4 and 8.  
Table 6. Addressing Mode  
A3  
0
Addressing Mode  
Sequential  
1
Interleave  
Burst Definition, Addressing Sequence of Sequential and Interleave Mode  
Table 7. Burst Address ordering  
Start Address  
Burst Length  
2
Sequential  
Interleave  
A2  
X
X
X
X
X
X
0
0
0
0
1
A1  
X
X
0
0
1
1
0
0
1
A0  
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0, 1  
1, 0  
0, 1, 2, 3  
1, 2, 3, 0  
2, 3, 0, 1  
3, 0, 1, 2  
0, 1  
1, 0  
0, 1, 2, 3  
1, 0, 3, 2  
2, 3, 0, 1  
3, 2, 1, 0  
4
0, 1, 2, 3, 4, 5, 6, 7  
1, 2, 3, 4, 5, 6, 7, 0  
2, 3, 4, 5, 6, 7, 0, 1  
3, 4, 5, 6, 7, 0, 1, 2  
4, 5, 6, 7, 0, 1, 2, 3  
5, 6, 7, 0, 1, 2, 3, 4  
6, 7, 0, 1, 2, 3, 4, 5  
7, 0, 1, 2, 3, 4, 5, 6  
0, 1, 2, 3, 4, 5, 6, 7  
1, 0, 3, 2, 5, 4, 7, 6  
2, 3, 0, 1, 6, 7, 4, 5  
3, 2, 1, 0, 7, 6, 5, 4  
4, 5, 6, 7, 0, 1, 2, 3  
5, 4, 7, 6, 1, 0, 3, 2  
6, 7, 4, 5, 2, 3, 0, 1  
7, 6, 5, 4, 3, 2, 1, 0  
1
0
0
1
8
1
1
1
1
CAS Latency Field (A6~A4)  
This field specifies the number of clock cycles from the assertion of the Read command to the first read data.  
The minimum whole value of CAS Latency depends on the frequency of CK. The minimum whole value  
satisfying the following formula must be programmed into this field.  
tCAC(min) CAS Latency X tCK  
Table 8. CAS Latency  
A6  
0
A5  
0
A4  
0
CAS Latency  
Reserved  
Reserved  
Reserved  
3 clocks  
0
0
1
0
1
0
0
1
1
1
0
0
Reserved  
Reserved  
2.5 clocks  
Reserved  
1
0
1
1
1
0
1
1
1
Etron Confidential  
7
Rev. 1.2  
May 2009  

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