EtronTech
EM639165
8Mega x 16 Synchronous DRAM (SDRAM)
(Rev 1.6, 02/2007)
Features
Pin Assignment (Top View)
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
2M word x 16-bit x 4-bank
Programmable Mode registers
- CAS# Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
Auto Refresh and Self Refresh
4096 refresh cycles/64ms
CKE power down mode
Single +3.3V power supply
Interface: LVTTL
54-pin 400 mil plastic TSOP II package
Lead-free package is available
•
•
•
•
•
•
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
DQM L
/WE
1
2
3
4
5
6
7
8
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
N C
DQM U
CLK
CK E
N C
A11
A9
A8
A7
A6
A5
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
•
•
•
•
•
•
•
/CAS
/RAS
/CS
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
A4
VSS
Overview
The EM639165 SDRAM is a high-speed CMOS
Key Specifications
EM639165
synchronous DRAM containing 128 Mbits. It is internally
configured as 4 Banks of 2M word x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write
accesses to the SDRAM are burst oriented; accesses
-
6/7
6/7 ns
tCK3 Clock Cycle time(min.)
tAC3 Access time from CLK(max.)
tRAS Row Active time(min.)
tRC Row Cycle time(min.)
5/5.4 ns
42/42 ns
60/63 ns
start at
a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command.
Ordering Information
The EM639165 provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use.
Part Number
EM639165TS-6G
EM639165TS-6LG
EM639165TS-7G
EM639165TS-7LG
Frequency Package
166MHz
166MHz
143MHz
143MHz
TSOP II
TSOP II
TSOP II
TSOP II
By having a programmable mode register, the
system can choose the most suitable modes to
maximize its performance. These devices are well suited
for applications requiring high memory bandwidth and
particularly well suited to high performance PC
applications.
“L” indicates Low Power.
“G” indicates Lead-free
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
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