Datasheet > EM404M924VTB

EM404M924VTB

更新时间： 2024-11-09 06:56:51

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
18页	823K
描述
16Mb ( 2Banks ) Synchronous DRAM

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中文翻译

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数据手册

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EM404M924VTB 数据手册

16Mb SDRAM

Ordering Information

EM 48 1M 16 2 2 V T A – 6 L

EOREX

Memory

Power

EDO/FPM

: 40

: 41

: 42

: 43

: 46

: 48

Blank : Standard

L : Low power

I : Industrial

D-RAMBUS

DDRSDRAM

DDRSGRAM

SGRAM

F: PB free package

SDRAM

Density

16M : 16 Mega Bits

8M : 8 Mega Bits

4M : 4 Mega Bits

2M : 2 Mega Bits

1M : 1 Mega Bit

Min Cycle Time ( Max Freq.)

-5 : 5ns ( 200MHz )

-6 : 6ns ( 167MHz )

-7 : 7ns ( 143MHz )

-75 : 7.5ns ( 133MHz )

-8 : 8ns ( 125MHz )

-10 : 10ns ( 100MHz )

Organization

8 : x8

9 : x9

16 : x16

18 : x18

32 : x32

Refresh

1 : 1K, 8 : 8K

2 : 2K, 6 :16K

4 : 4K

Bank

Revision

A : 1st B : 2nd

C : 3rd D :4th

2 : 2Bank 6 : 16Bank

4 : 4Bank 3 : 32Bank

8 : 8Bank

Package

Interface

V: 3.3V

R: 2.5V

C: CSP B: uBGA

T: TSOP Q: TQFP

P: PQFP ( QFP )

1/18

Rev.01

12 3 4 5 6 7...18

中文翻译

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