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ELM7SH00MB-EL PDF预览

ELM7SH00MB-EL

更新时间: 2024-11-30 11:46:19
品牌 Logo 应用领域
ELM-TECH /
页数 文件大小 规格书
3页 311K
描述
HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate

ELM7SH00MB-EL 数据手册

 浏览型号ELM7SH00MB-EL的Datasheet PDF文件第2页浏览型号ELM7SH00MB-EL的Datasheet PDF文件第3页 
HIGH SPEED CMOS LOGIC IC  
■General description  
2-input NAND gate  
ELM7SH00xB  
ELM7SH00xB is CMOS 2-input NAND gate which is suitable for battery-operated devices because of its ultra  
high speed opeartion performed by low voltage. The low power consumption contributes to longer battery life,  
which makes long time operation of devices possible. The internal circuit which provides high noise immunity  
and stable output is composed of 3 stages, including buffered output.  
■Features  
• Same electrical characteristic and high speed operation as 74VHC series  
• Low consumption current  
• Wide power voltage range  
• Wide input voltage range  
• High speed  
: Idd=1.0µA(Max.)(Top=25°C)  
: 2.0V to 5.5V  
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)  
: Tpd=2ns(Typ.)(Vdd=5.0V)  
: SOT-25, SC-70-5(SOT-353)  
• Small package  
• Same function and pin configuration as ELM7SxxB  
■Application  
• Cell phones  
• Digital cameras  
• Portable electrical appliances like PDA, etc.  
• Computers and peripherals  
• Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.  
• Modification inside print board, adjustment of timing, solution to noise  
• Power voltage change from 5V to 3V  
■Selection guide  
ELM7SH00xB-EL  
Symbol  
a
Function  
Package  
00: 2-input NAND gate  
ELM7SH 0 0 x B - EL  
M: SOT-25  
T : SC-70-5(SOT-353)  
b
↑ ↑ ↑  
d
a b c  
c
d
Product version  
Taping direction  
B
EL: Refer to PKG file  
■Maximum absolute ratings  
Parameter  
Power supply voltage  
Input voltage  
Symbol  
Vdd  
Vin  
Vout  
Iik  
Iok  
Iout  
Idd, Ignd  
Pd  
Limit  
Unit  
V
V
-0.5 to +6.0  
-0.5 to +6.0  
-0.5 to Vdd+0.5  
Output voltage  
V
-
Input protection diode current  
Output parasitic diode current  
Output current  
VDD/GND current  
Power dissipation  
20  
mA  
mA  
mA  
mA  
mW  
°C  
±
20  
±
25  
±
50  
150  
Storage temperature  
Tstg  
-65 to +150  
3 - 1  

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