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ELM7SH86MB-EL PDF预览

ELM7SH86MB-EL

更新时间: 2024-11-30 11:46:03
品牌 Logo 应用领域
ELM-TECH /
页数 文件大小 规格书
3页 312K
描述
HIGH SPEED CMOS LOGIC IC ELM7SH86xB 2-input Exclusive OR gate

ELM7SH86MB-EL 数据手册

 浏览型号ELM7SH86MB-EL的Datasheet PDF文件第2页浏览型号ELM7SH86MB-EL的Datasheet PDF文件第3页 
HIGH SPEED CMOS LOGIC IC  
■General description  
2-input Exclusive OR gate  
ELM7SH86xB  
ELM7SH86xB is CMOS 2-input EXOR gate which is suitable for battery-operated devices because of its low  
voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which  
allows long time operation of devices. The internal circuit which provides high noise immunity and stable  
output is composed of 3 stages, including buffered output.  
■Features  
• Same electrical characteristic and high speed operation as 74VHC series  
• Low consumption current  
• Wide power voltage range  
• Wide input voltage range  
• High speed  
: Idd=1.0μA(Max.)(Top=25°C)  
: 2.0V to 5.5V  
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)  
: Tpd=2ns(Typ.)(Vdd=5.0V)  
: SOT-25, SC-70-5(SOT-353)  
• Small package  
• Same function and pin configuration as ELM7SxxB  
■Application  
• Cell phones  
• Digital cameras  
• Portable electrical appliances like PDA, etc.  
• Computers and peripherals  
• Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.  
• Modification inside print board, adjustment of timing, solution to noise  
• Power voltage change from 5V to 3V  
■Selection guide  
ELM7SH86xB-EL  
Symbol  
a
Function  
Package  
86: 2-input Exclusive OR gate  
ELM7SH 8 6 x B - EL  
M: SOT-25  
T: SC-70-5(SOT-353)  
b
↑ ↑ ↑  
d
a b c  
c
d
Product version  
Taping direction  
B
EL: Refer to PKG file  
■Maximum absolute ratings  
Parameter  
Power supply voltage  
Input voltage  
Symbol  
Vdd  
Vin  
Vout  
Iik  
Iok  
Iout  
Idd, Ignd  
Pd  
Limit  
Unit  
V
V
-0.5 to +6.0  
-0.5 to +6.0  
-0.5 to Vdd+0.5  
Output voltage  
V
-
Input protection diode current  
Output parasitic diode current  
Output current  
VDD/GND current  
Power dissipation  
20  
mA  
mA  
mA  
mA  
mW  
°C  
±
20  
±
25  
±
50  
150  
Storage temperature  
Tstg  
-65 to +150  
3 - 1  

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