Datasheet > ELC-1020-28-1

ELC-1020-28-1

更新时间： 2024-09-10 10:07:39

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	87K
描述
LED - Chip

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数据手册

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ELC-1020-28-1 数据手册

LED - Chip

ELC-1020-28-1

discontinued

10.04.2007

Technology

rev. 04/06

Type

Electrodes

Radiation

Infrared

MQW

InGaAs/GaAs

N (cathode) up

460

360

300

typ. dimensions (µm)

typ. thickness

260 (±20) µm

cathode

gold alloy, 1.5 µm

anode

gold alloy, 1.5 µm,

solderable

PD-02

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

V_F

Min

Typ

1.2

Max

1.4

Unit

conditions

I_F= 100 mA

Forward voltage

Reverse voltage

V_R

Φ_e

I_R= 10 µA

Radiant power¹

Radiant power²

I_F= 100 mA

0.75

1.5

3.0

1020

Φ_e

λ_p

Peak wavelength

Spectral bandwidth at 50%

Switching time

1000

1050

∆λ_0.5

t_r, t_f

¹Measured on bare chip on TO-18 header with EPIGAP equipment

²Measured on epoxy covered chip on TO-18 header with EPIGAP equipment

Labeling

Lot N°

Φ_e(typ) [mW]

V_F(typ) [V]

Quantity

Type

ELС-1020-28-1

Packing: Chips on adhesive film with wire-bond side on top

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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