EKV550

更新时间： 2024-01-12 13:16:05

品牌	Logo	应用领域
三垦 - SANKEN		局域网
页数	文件大小	规格书
9页	317K
描述
50V N-ch MOSFET

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数据手册

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EKV550 数据手册

50V N-ch MOSFET

EKV550

January. 2006

■Features

■Package—TO-220

• Low on-resistance

• Avalanche energy capability guaranteed

• Built-in Gate protection diode against electrostatic

discharge (ESD)

■Applications

• DC-DC Converters

• High speed switching

■Equivalent circuit

D (2)

G (1)

S (3)

Absolute maximum ratings

(Ta=25°C）

Parameter

Symbol

VDSS

Rating

Unit

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Pulsed Drain Current

VGSS

±20

±50A

±150A

ID(pulse) ¹⁾

Maximum Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

EAS ²⁾

IAS

85 (Tc=25°C)

150

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

-55 to 150

1) PW≤100μs, duty cycle≤1%

2) VDD=20V,L=72μH, ILp=50A, unclamped, RG=50Ω. See Fig.1

Sanken Electric Co.,Ltd.

http://www.sanken-ele.co.jp/en/

T02-005JA-060111

1/9

12 3 4 5 6 7...9

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