Datasheet > EIB1818-1P

EIB1818-1P

更新时间： 2022-12-18 00:31:44

品牌	Logo	应用领域
EXCELICS		/
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描述
18.15-18.75GHz, 1W Internally Matched Power FET

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EIB1818-1P 数据手册

Excelics

EIA/EIB1818-1P

Not recommended for new designs. Contact factory. Effective 03/2003

18.15-18.75GHz, 1W Internally Matched Power FET

18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

EIA FEATURES HIGH PAE( 25% TYPICAL)

EIB FEATURES HIGH IP3(43dBm TYPICAL)

+30.0/+29.5dBm TYPICAL P_1dBOUTPUT POWER FOR

EIA/EIB

6.5/5.5dB TYPICAL G_1dBPOWER GAIN FOR EIA/EIB

NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

EIA1818-1P

TYP

EIB1818-1P

TYP

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

dBm

MIN

MAX

MIN

MAX

Output Power at 1dB Compression f=18.15-18.75GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

30.0

29.0

29.5

P_1dB

G_1dB

PAE

Gain at 1dB Compression

f=18.15-18.75GHz

6.0

6.5

5.0

5.5

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Power Added Efficiency at 1dB compression

f=18.15-18.75GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Drain Current at 1dB Compression

440

425

43*

Id_1dB

IP3

Output 3^rdOrder Intercept Point

f=18.15-18.75GHz

dBm

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Saturated Drain Current Vds=3V, Vgs=0V

550

-13

720

760

-1.0

-15

850

-2.5

550

720

360

-2.0

-15

850

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=6mA

Drain Breakdown Voltage Igd=2.4mA

BVgd

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

Rth

*Typical –45dBc IM3 at Pout=20dBm/Tone

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

Idss

Igsf

Tch

Tstg

Forward Gate Current

Input Power

90mA

32dBm

175^oC

-65/175^oC

8.5W

15mA

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

7.1W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085

Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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