Datasheet > EGP10A-HE3/73

EGP10A-HE3/73

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

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EGP10A-HE3/73 数据手册

EGP10A thru EGP10G

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

SUPERECTIFIER^®

DO-204AL (DO-41)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

t_rr

50 V to 400 V

30 A

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

I_FSM

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Operating junction and storage temperature range T_J, T_STG

- 65 to + 150

°C

Document Number: 88582

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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