Datasheet > EGN010MK

EGN010MK

更新时间： 2024-11-05 06:56:19

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描述
High Voltage - High Power GaN-HEMT

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中文翻译

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EGN010MK 数据手册

Eudyna GaN-HEMT 10W

EGN010MK

Preliminary

High Voltage - High Power GaN-HEMT

FEATURES

・

High Voltage Operation : VDS=50V

・

High Power : 41.0dBm (typ.) @ P3dB

・

High Efficiency: 60%(typ.) @ P3dB

・Linear Gain : 15dB(typ.) @ f=3500MHz

・Broad Frequency Range : 800 to 3700MHz

・Proven Reliability

DESCRIPTION

Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

consistency and broad bandwidth for high power L-band amplifiers with

50V operation, and gives you higher gain.

This device target applications are low current and wide band

applications for high voltage.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

120

-5

40.9

-65 to +175

250

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Tc=25^oC

stg

^oC

RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25^oC)

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

Forward Gate Current

Reverse Gate Current

Channel Temperature

=50 Ω

<2.0

>-0.5

200

^oC

RG=50 Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Item

Symbol Condition

Limit

Unit

min. Typ. Max.

Pinch-Off Voltage

VDS=50V IDS=2.6mA -1.0

-2.0

-350

41.0

-3.5

dBm

Gate-Drain Breakdown Voltage

3dB Gain Compression Power

Drain Efficiency

GDO

GS=- 1.3 mA

DS=50V

IDS(DC)=100mA

40.0

P3dB

Linear Gain

Thermal Resistance

Rth

f=3.5GHz

Channel to Case

14.0

15.0

4.5

^oC/W

5.5

Edition 1.0

June 2005

12 3

中文翻译

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