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EFM304B-W PDF预览

EFM304B-W

更新时间: 2024-11-09 13:07:35
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

EFM304B-W 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMB, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.33Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:SUPER FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EFM304B-W 数据手册

 浏览型号EFM304B-W的Datasheet PDF文件第2页 
EFM301  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
EFM306  
SURFACE MOUNT GLASS PASSIVATED  
SUPER FAST SILICON RECTIFIER  
VOLTAGE RANGE 50 to 400 Volts CURRENT 3.0 Amperes  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.24 gram  
DO-214AB  
MECHANICAL DATA  
(
)
0.125 3.17  
* Epoxy : Device has UL flammability classification 94V-0  
(
)
)
0.245 6.22  
(
)
0.115 2.92  
(
0.220 5.59  
(
)
0.280 7.11  
(
)
0.260 6.60  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
)
0.103 2.62  
(
0.079 2.06  
(
)
0.060 1.52  
(
)
0.008 0.203  
(
)
0.030 0.76  
(
)
0.004 0.102  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
)
0.320 8.13  
(
0.305 7.75  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
EFM301 EFM302 EFM303 EFM304 EFM305 EFM306  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
V
V
RRM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
O
100  
I
3.0  
Amps  
Amps  
at TA  
= 55oC  
Peak Forward Surge Current IFM (surge): 8.3 ms single half  
sine-wave superimposed on rated load (JEDEC method)  
I
FSM  
125  
Typical Junction Capacitance (Note 2)  
C
J
50  
30  
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At T  
CHARACTERISTICS  
Maximum Forward Voltage at 3.0A DC  
A
= 25oC unless otherwise noted)  
SYMBOL  
EFM301 EFM302 EFM303 EFM304 EFM305 EFM306  
0.95 1.25  
UNITS  
Volts  
V
F
Maximum DC Reverse Current  
@T  
@T  
A
A
= 25oC  
=150oC  
5.0  
50  
35  
I
R
uAmps  
at Rated DC Blocking Voltage  
Maximum Reverse Recovery Time (Note 1)  
trr  
nSec  
NOTES : 1. Test Conditions: I  
F
=0.5A, I  
R=-1.0A, IRR=-0.25A.  
2001-5  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts.  

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