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EFM101F-T PDF预览

EFM101F-T

更新时间: 2024-10-28 12:59:11
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 555K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, SMAF, 2 PIN

EFM101F-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:50 V最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EFM101F-T 数据手册

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EFM101  
THRU  
EFM107  
SURFACE MOUNT GLASS PASSIVATED  
SUPER FAST SILICON RECTIFIER  
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.057 gram  
DO-214AC  
MECHANICAL DATA  
* Epoxy : Device has UL flammability classification 94V-0  
0.067 (1.70 )  
0.051 (1.29 )  
0.110 ( 2.79 )  
0.086 ( 2.18 )  
0.180 ( 4.57 )  
0.160 ( 4.06 )  
0.012 ( 0.305 )  
0.006 ( 0.152 )  
0.091 ( 2.31 )  
0.067 ( 1.70 )  
0.059 ( 1.50 )  
0.035 ( 0.89 )  
0.008 ( 0.203 )  
0.004 ( 0.102 )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
0.209 ( 5.31 )  
0.185 ( 4.70 )  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
RATINGS  
SYMBOL  
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
150  
V
50  
100  
200  
300  
Volts  
Volts  
Volts  
400  
280  
400  
600  
420  
600  
RRM  
105  
150  
V
35  
50  
70  
140  
200  
210  
300  
RMS  
100  
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified Current  
I
1.0  
30  
Amps  
Amps  
at T = 55oC  
O
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
R
R
85  
35  
θJA  
0C/W  
Typical Thermal Resistance (Note 4)  
θJL  
Typical Junction Capacitance (Note 2)  
C
15  
10  
pF  
0C  
J
Operating and Storage Temperature Range  
T , T  
-55 to + 150  
J
STG  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107  
Maximum Instantaneous Forward Voltage at 1.0A DC  
V
0.95  
1.25  
1.50  
F
@T = 25oC  
A
5.0  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
µAmps  
I
R
@T = 100oC  
100  
A
Maximum Reverse Recovery Time (Note 1)  
trr  
35  
50  
nSec  
2006-11  
REV:B  
NOTES : 1. Reverse Recovery Test Conditions: I  
F
= 0.5A, I  
R
= -1.0A, IRR = -0.25A  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts  
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
4. Thermal Resistance : Mounted on PCB.  

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