Datasheet > EDJ8232B5MB-GN-F

EDJ8232B5MB-GN-F

更新时间： 2024-11-29 11:45:07

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
142页	1199K
描述
8G bits DDR3 SDRAM, DDP

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数据手册

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EDJ8232B5MB-GN-F 数据手册

DATA SHEET

8G bits DDR3 SDRAM, DDP

EDJ8232B5MB (256M words  32 bits)

Specifications

Features

 Density: 8G bits

 Organization

 32M words  32 bits  8 banks

 Package

 Double-data-rate architecture: two data transfers per

clock cycle

 The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

 Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

 136-ball FBGA

 DDP: 2 pieces of 4G bits chip sealed in one

package

 DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

 Lead-free (RoHS compliant) and Halogen-free

 Power supply: VDD, VDDQ  1.5V  0.075V

 Data rate

 1600Mbps/1333Mbps (max.)

 4KB page size

 Differential clock inputs (CK and /CK)

 DLL aligns DQ and DQS transitions with CK

transitions

 Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

 Row address: A0 to A14

 Data mask (DM) for write data

 Posted /CAS by programmable additive latency for

better command and data bus efficiency

 Column address: A0 to A9

 Eight internal banks for concurrent operation

 Interface: SSTL_15

 Burst lengths (BL): 8 and 4 with Burst Chop (BC)

 Burst type (BT):

 Sequential (8, 4 with BC)

 Interleave (8, 4 with BC)

 /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11

 /CAS Write Latency (CWL): 5, 6, 7, 8

 On-Die Termination (ODT) for better signal quality

 Synchronous ODT

 Dynamic ODT

 Asynchronous ODT

 Multi Purpose Register (MPR) for pre-defined pattern

read out

 ZQ calibration for DQ drive and ODT

 Programmable Partial Array Self-Refresh (PASR)

 /RESET pin for Power-up sequence and reset

function

 Precharge: auto precharge option for each burst

access

 Driver strength: RZQ/7, RZQ/6 (RZQ = 240)

 Refresh: auto-refresh, self-refresh

 Refresh cycles

 Average refresh period

7.8s at 0C  TC  85C

3.9s at 85C  TC  95C

 SRT range:

 Normal/extended

 Programmable Output driver impedance control

 Operating case temperature range

 TC = 0C to +95C

Document No. E1825E30 (Ver. 3.0)

Date Published March 2012 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2011-2012

12 3 4 5 6 7...142

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与EDJ8232B5MB-GN-F相关器件

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EDJ8232E5MB	ELPIDA	获取价格	8G bits DDR3L SDRAM, DDP
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EDJ8232E5MB-GN-F	ELPIDA	获取价格	8G bits DDR3L SDRAM, DDP
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