ECQ10A04

更新时间： 2024-11-14 21:54:03

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管
页数	文件大小	规格书
6页	112K
描述
Schottky barrier Diode

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中文翻译

获取价格

数据手册

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ECQ10A04 数据手册

1０Ａ４０Ｖ

SBD Type：ECQ10A04

■OUTLINE DRAWING

構造

：ショットキーバリアダイオード(SBD)

Construction: Schottky barrier Diode

カソードコモン型

用途

：高周波整流用

Application : High Frequency Rectification

■最大定格 / Maximum Ratings

Approx Net Weight:0.35g

ECQ10A04

Symbol

Unit

Rating

くり返しピーク逆電圧

V_RRM

Repetitive Peak Reverse Voltage

50 Hz,正弦全波通電、抵抗負荷

Full Sine Wave ResistiveLoad

同上基盤実装時

10.0 Tc=105℃

2.0 Ta=23℃

平均整流電流

I_O

Average Rectified Output Current

P.C.Board mounted*

実効順電流

I_F(RMS)

I_FSM

11.1

RMS Forward Current

サージ順電流

50 Hz 正弦全波, 1サイクル, 非くり返し

Full Sine Wave,1cycle,Non-repetitive

100

Surge Forward Current

動作接合温度範囲

Tjw

- 40 ～ + 150

℃

Operating JunctionTemperature Range

保存温度範囲

Tstg

Storage Temperature Range

■電気的・熱的特性 / Electrical ･ Thermal Characteristics

Characteristics

ピーク逆電流

Symbol

I_RM

Conditions

Min Typ Max. Unit

Tj=25℃,V_RM=V_RRMper Diode

Peak Reverse Current

ピーク順電圧

V_FM

Tj=25℃,I_FM= 5A per Diode

- 0.55 V

Peak Forward Voltage

接合部・ケース間

Junction to Case

Rth(j-c)

熱抵抗

Thermal Resistance

℃/W

接合部・周囲間（基盤実装時）

Rth(j-a) Junction to Ambent

(with P.C.Board mounted*)

*：Print land 20x20

12 3 4 5 6

中文翻译

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