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ECQ10A04-F PDF预览

ECQ10A04-F

更新时间: 2024-11-14 23:14:47
品牌 Logo 应用领域
NIEC 肖特基二极管
页数 文件大小 规格书
6页 75K
描述
Schottky Barrier Diode

ECQ10A04-F 数据手册

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10A 40V Cathode Common  
SBD Type : ECQ10A04-F  
OUTLINE DRAWING  
For High Frequency Rectification  
FEATURES  
* High VRM SBD  
* Low Forward Voltage Drop and Low Noise  
* Fully Molded Isolation  
* Dual Diodes Cathode Common  
Maximum Ratings  
Approx Net Weight:0.30g  
ECQ10A04-F  
Symbol  
Rating  
Unit  
V
Repetitive Peak Reverse Voltage  
VRRM  
40  
50 Hz,Full Sine Wave  
Resistive Load  
50 Hz,Full Sine Wave  
10  
Tc=105°C  
Average Rectified Output Current  
IO  
A
2.0  
Ta=28°C Resistive Load  
P.C.Board mounted *  
RMS Forward Current  
Surge Forward Current  
IF(RMS)  
IFSM  
11.1  
50 Hz Full Sine Wave,1cycle  
Non-repetitive  
A
A
100  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
- 40 to + 150  
- 40 to + 150  
°C  
°C  
Electrical Thermal Characteristics  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Characteristics  
Peak Reverse Current  
Peak Forward Voltage  
Thermal Resistance  
*: Print Land 20x20  
IRM  
VFM  
Tj=25°C,VRM=VRRM per Diode  
Tj=25°C, IFM=5A per Diode  
-
-
-
-
-
-
3
0.55  
4
mA  
V
Rth(j-c) Junction to Case  
°C/W  
Junction to Ambent  
With P.C.Board mounted *  
Rth(j-a)  
-
-
80  

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