ECH06A20-F

更新时间： 2024-10-16 23:14:47

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管
页数	文件大小	规格书
6页	77K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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ECH06A20-F 数据手册

6A 200V Cathode Common

SBD Type : ECH06A20-F

OUTLINE DRAWING

For High Frequency Rectification

FEATURES

* High VRM SBD

* Low Forward Voltage Drop and Low Noise

* Fully Molded Isolation

* Dual Diodes Cathode Common

Maximum Ratings

Approx Net Weight:0.30g

ECH06A20-F

Symbol

Rating

Unit

Repetitive Peak Reverse Voltage

V_RRM

200

50 Hz,Full Sine Wave

Resistive Load

6.0 Tc=116°C

Average Rectified Output Current

I_O

50 Hz,Full Sine Wave

1.0

Ta=30°C Resistive Load

P.C.Board mounted *

RMS Forward Current

Surge Forward Current

I_F(RMS)

I_FSM

6.66

50 Hz Full Sine Wave,1cycle

Non-repetitive

Operating JunctionTemperature Range

Storage Temperature Range

Tjw

Tstg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

*: Print Land 20x20

I_RM

V_FM

Tj=25°C,V_RM=V_RRMper Diode

Tj=25°C, I_FM=3A per Diode

200

0.90

µA

Rth(j-c) Junction to Case

°C/W

Junction to Ambent

With P.C.Board mounted *

Rth(j-a)

12 3 4 5 6

中文翻译

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