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EBE20AE4ACFA-6E-E PDF预览

EBE20AE4ACFA-6E-E

更新时间: 2024-02-08 06:38:52
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
27页 228K
描述
2GB Registered DDR2 SDRAM DIMM

EBE20AE4ACFA-6E-E 数据手册

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EBE20AE4ACFA  
CKE (input pin)  
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the  
CKE is driven low and exited when it resumes to high.  
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge  
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold  
time tIH.  
DQ, CB (input and output pins)  
Data are input to and output from these pins.  
DQS (input and output pin)  
DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input).  
VDD (power supply pins)  
1.8V is applied. (VDD is for the internal circuit.)  
VDDSPD (power supply pin)  
1.8V is applied (For serial EEPROM).  
VSS (power supply pin)  
Ground is connected.  
/RESET(input pin)  
LVCMOS reset input. When /RESET is Low, all registers are reset.  
Par_IN (Parity input pin)  
Parity bit for the address and control bus.  
/Err_Out (Error output pin)  
Parity error found on the address and control bus.  
Detailed Operation Part and Timing Waveforms  
Refer to the EDE1104ACSE, EDE1108ACSE, EDE1116ACSE datasheet (E0975E). DM pins of component device  
fixed to VSS level on the module board. DIMM /CAS latency = component CL + 1 for registered type.  
Data Sheet E1076E30 (Ver. 3.0)  
24  

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