EBD51RD8ABFA-7A

更新时间： 2024-02-08 03:02:49

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
19页	190K
描述
512MB Registered DDR SDRAM DIMM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EBD51RD8ABFA-7A 数据手册

EBD51RD8ABFA

Electrical Specifications

• All voltages are referenced to VSS (GND).

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

–1.0 to +3.6

VDD

IOS

°C

Operating ambient temperature

Storage temperature

0 to +70

–55 to +125

Tstg

Note: 1. DDR SDRAM component specification

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = 0 to +70°C)

(DDR SDRAM component Specification)

Parameter

Symbol

VDD,VDDQ

VSS

Min

Typ

2.5

Max

2.7

Unit

Notes

Supply voltage

2.3

Input reference voltage

Termination voltage

Input high voltage

Input low voltage

VREF

0.49 × VDDQ

VREF – 0.04

VREF + 0.15

–0.3

0.50 × VDDQ 0.51 × VDDQ

VTT

VREF

—

VREF + 0.04

VDDQ + 0.3

VREF – 0.15

VIH (DC)

VIL (DC)

—

Input voltage level,

VIN (DC)

VIX (DC)

VID (DC)

–0.3

—

VDDQ + 0.3

CK and /CK inputs

Input differential cross point

voltage, CK and /CK inputs

Input differential voltage,

CK and /CK inputs

0.5 × VDDQ − 0.2V 0.5 × VDDQ

0.36

0.5 × VDDQ + 0.2V

VDDQ + 0.6

—

5, 6

Notes: 1. VDDQ must be lower than or equal to VDD.

2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.

3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.

4. VIN (DC) specifies the allowable DC execution of each differential input.

5. VID (DC) specifies the input differential voltage required for switching.

6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V

if measurement.

Preliminary Data Sheet E0376E10 (Ver. 1.0)

1...7 8 91011 12 13...19

中文翻译

下载PDF

与EBD51RD8ABFA-7A相关器件

型号	品牌	获取价格	描述	数据表
EBD51RD8ABFA-7B	ELPIDA	获取价格	512MB Registered DDR SDRAM DIMM
EBD52EC8AAFA	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM DIMM
EBD52EC8AAFA-6B	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM DIMM
EBD52EC8AAFA-7B	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM DIMM
EBD52EC8AJFA	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM
EBD52EC8AJFA-6B	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM
EBD52EC8AJFA-7A	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM
EBD52EC8AJFA-7B	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM
EBD52EC8AKFA-5	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM DIMM (64M words x 72 bits, 2 Ranks)
EBD52EC8AKFA-5B	ELPIDA	获取价格	512MB Unbuffered DDR SDRAM DIMM (64M words x 72 bits, 2 Ranks)