Datasheet > EBD11UD8ADFB-6B-E

EBD11UD8ADFB-6B-E

更新时间： 2024-01-27 13:57:30

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
19页	187K
描述
DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184

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EBD11UD8ADFB-6B-E 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIMM	包装说明：	DIMM,
针数：	184	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.36
风险等级：	5.84	访问模式：	DUAL BANK PAGE BURST
最长访问时间：	0.7 ns	其他特性：	AUTO/SELF REFRESH
JESD-30 代码：	R-XDMA-N184	JESD-609代码：	e4
内存密度：	8589934592 bit	内存集成电路类型：	DDR DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	184
字数：	134217728 words	字数代码：	128000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	128MX64
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
自我刷新：	YES	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Gold (Au)
端子形式：	NO LEAD	端子位置：	DUAL
处于峰值回流温度下的最长时间：	50	Base Number Matches：	1

EBD11UD8ADFB-6B-E 数据手册

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EBD11UD8ADFB

CAUTION FOR HANDLING MEMORY MODULES

When handling or inserting memory modules, be sure not to touch any components on the modules, such as

the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on

these components to prevent damaging them.

In particular, do not push module cover or drop the modules in order to protect from mechanical defects,

which would be electrical defects.

When re-packing memory modules, be sure the modules are not touching each other.

Modules in contact with other modules may cause excessive mechanical stress, which may damage the

modules.

MDE0202

NOTES FOR CMOS DEVICES

PRECAUTION AGAINST ESD FOR MOS DEVICES

Exposing the MOS devices to a strong electric field can cause destruction of the gate

oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop

generation of static electricity as much as possible, and quickly dissipate it, when once

it has occurred. Environmental control must be adequate. When it is dry, humidifier

should be used. It is recommended to avoid using insulators that easily build static

electricity. MOS devices must be stored and transported in an anti-static container,

static shielding bag or conductive material. All test and measurement tools including

work bench and floor should be grounded. The operator should be grounded using

wrist strap. MOS devices must not be touched with bare hands. Similar precautions

need to be taken for PW boards with semiconductor MOS devices on it.

HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES

No connection for CMOS devices input pins can be a cause of malfunction. If no

connection is provided to the input pins, it is possible that an internal input level may be

generated due to noise, etc., hence causing malfunction. CMOS devices behave

differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected

to V^DDor GND with a resistor, if it is considered to have a possibility of being an output

pin. The unused pins must be handled in accordance with the related specifications.

STATUS BEFORE INITIALIZATION OF MOS DEVICES

Power-on does not necessarily define initial status of MOS devices. Production process

of MOS does not define the initial operation status of the device. Immediately after the

power source is turned ON, the MOS devices with reset function have not yet been

initialized. Hence, power-on does not guarantee output pin levels, I/O settings or

contents of registers. MOS devices are not initialized until the reset signal is received.

Reset operation must be executed immediately after power-on for MOS devices having

reset function.

CME0107

Data Sheet E0414E20 (Ver. 2.0)

1...15 16 171819

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EBD11UD8ADFB-7A	ELPIDA	1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)	获取价格
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EBD11UD8ADFB-7B	ELPIDA	1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)	获取价格
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