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EBD12UB8ALF-7A PDF预览

EBD12UB8ALF-7A

更新时间: 2024-02-11 09:18:57
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
16页 160K
描述
128MB Unbuffered DDR SDRAM DIMM

EBD12UB8ALF-7A 数据手册

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PRELIMINARY DATA SHEET  
128MB Unbuffered DDR SDRAM DIMM  
EBD12UB8ALF (16M words × 64 bits, 1 Bank)  
Description  
Features  
The EBD12UB8ALF is 16M words × 64 bits, 1 bank  
Double Data Rate (DDR) SDRAM unbuffered module,  
184-pin socket type dual in line memory module  
(DIMM)  
mounted  
8 pieces of 128M bits DDR SDRAM  
Outline: 133.35mm (Length) × 31.75mm (Height) ×  
(EDD1208ALTA) sealed in TSOP package. Read and  
write operations are performed at the cross points of  
the CLK and the /CLK. This high-speed data transfer  
is realized by the 2 bits prefetch-pipelined architecture.  
Data strobe (DQS) both for read and write are available  
for high speed and reliable data bus design. By setting  
extended mode register, the on-chip Delay Locked  
Loop (DLL) can be set enable or disable. An outline of  
the products is 184-pin socket type package (dual lead  
out). Therefore, it makes high density mounting  
possible without surface mount technology. It provides  
4.00mm (Thickness)  
Lead pitch: 1.27mm  
2.5V power supply (VDD/VDDQ)  
SSTL-2 interface for all inputs and outputs  
Clock frequency: 133MHz/100MHz (max.)  
Data inputs and outputs are synchronized with DQS  
4 banks can operate simultaneously and  
independently (Component)  
Burst read/write operation  
Programmable burst length: 2, 4, 8  
Burst read stop capability  
Programmable burst sequence  
Sequential  
common data inputs and outputs.  
Decoupling  
capacitors are mounted beside each TSOP on the  
module board.  
Interleave  
Start addressing capability  
Even and Odd  
Programmable /CAS latency (CL): 2, 2.5  
4096 refresh cycles: 15.6µs (4096/64ms)  
2 variations of refresh  
Auto refresh  
Self refresh  
Document No. E0216E10 (Ver. 1.0)  
Date Published September 2001 (K)  
Printed in Japan  
URL: http://www.elpida.com  
C
Elpida Memory, Inc. 2001  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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