Datasheet > EB200P70-AJ

EB200P70-AJ

更新时间： 2024-02-18 20:35:26

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
9页	461K
描述
HIGH FREQUENCY PACKAGED PHEMT

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EB200P70-AJ 数据手册

FPD200P70

Data sheet v3.0

HIGH FREQUENCY PACKAGED PHEMT

FEATURES:

PACKAGE

•

20 dBm Output Power (P_1dB

)

17 dB Gain at 5.8 GHz

0.7 dB Noise Figure at 5.8 GHz

30 dBm Output IP3

45% Power-Added Efficiency

Useable Gain to 26 GHz

RoHS

GENERAL DESCRIPTION:

The FPD200P70 is a packaged depletion

mode AlGaAs/InGaAs pseudomorphic High

Electron Mobility Transistor (pHEMT). It

utilizes a 0.25 mm x 200 mm Schottky barrier

Gate, defined by high-resolution stepper-

based photolithography.

TYPICAL APPLICATIONS:

•

LNAs and Driver Amplifiers to 26GHz

VCOs and Frequency Doublers

TYPICAL PERFORMANCE:

RF PARAMETER

Power at 1dB Gain Compression

Small Signal Gain

SYMBOL

P1dB

CONDITIONS

VDS = 5 V; IDS = 30mA

1.85GHZ

5.8GHZ 18GHZ UNITS

dBm

SSG

Power-Added Efficiency

PAE

VDS = 5 V; IDS = 30mA

POUT = P1dB

Maximum Stable Gain (|S21/S12|)

Minimum Noise Figure

MSG

NFmin

IP3

VDS = 5 V; IDS = 30mA

0.3

0.7

2.2

Output Third-Order Intercept Point

POUT = 9 dBm per Tone

VDS = 5V; IDS = 30mA

VDS = 8V; IDS = 30mA

28.5

dBm

ELECTRICAL SPECIFICATIONS:

DC PARAMETER

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

IDSS

VDS = 1.3 V; VGS = 0 V

IMAX

120

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

|VP|

µA

VDS = 1.3 V; IDS = 0.2 mA

IGS = 0.2 mA

0.7

0.9

1.3

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|VBDGS|

|VBDGD|

θJC

IGD = 0.2 mA

14.5

VDS > 3V

325

°C/W

Note: T_AMBIENT= 22°

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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