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EB201

更新时间： 2024-02-26 03:26:25

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安森美 - ONSEMI		/
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High Cell Density MOSFETs Low On-Resistance Affords New Design Options

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EB201 数据手册

EB201/D

High Cell Density MOSFETs

Low On–Resistance Affords

New Design Options

Prepared by: Kim Gauen and Wayne Chavez

ON Semiconductor

http://onsemi.com

ENGINEERING BULLETIN

Just a few years ago an affordable 60 V, 10 mΩ power

transistor was a dream. After all, 10 mΩ is the resistance of

on–resistance are its spreading, channel, JFET,

accumulation region, and substrate resistances. To achieve

about 20 cm of #22 gauge wire. Today a sub–10 mΩ power

MOSFET is not only available, it is housed in a standard

TO–220. Such are the advances that have occurred lately in

“high cell density” power MOSFET technology.

Furthermore, Motorola’s high cell density technology,

HDTMOS , brings other advantages such as greatly

improved body diode performance. The technological

advances are sufficiently great that they are fundamentally

changing low voltage power transistor technology.

ultra–low R

, device designers must decrease the

DS(on)

resistance of all these components. Most of the resistive

elements can be reduced by shrinking cell size and adding

more cells per square centimeter of silicon. However, there

is a limit to maximum packing density. As cell density

becomes very high, on–resistance actually increases due to

a higher JFET resistance. With today’s processes and cell

geometries, the optimum cell density is about five times that

of standard power MOSFETs. Devices built with ON

Semiconductor’s high cell density process (HDTMOS)

Cutting the MOSFET’s On–Resistance

A cross section of the power MOSFET is shown in

Figure 1. The major contributors to the standard MOSFET’s

employ about 6 M cells/in , up from the 1.2 M cells/in used

in standard power MOSFETs. Figure 2 illustrates the

marked difference in cell density.

SOURCE

GATE

R (PACKAGE)

R (METAL)

R (CONTACT)

P +

R (CH)

P –

R (JFET)

R(N+)

R (ACCUM)

epi

R (SPREAD)

R (BULK)

R (SUBSTRATE)

DRAIN

N + SUBSTRATE

Figure 1. HDTMOS Cross Section

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

February, 2002 – Rev. 1

EB201/D

12 3 4 5 6 7 8

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