是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.27 | 其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 47 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN SILVER COPPER | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD143EKT246 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
DTD143EL | ETC |
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TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD143EL-AE3-6-R | UTC |
获取价格 |
DIGITAL TRANSISTORS (BUILT- IN RESISTORS) | |
DTD143EL-AE3-R | UTC |
获取价格 |
DIGITAL TRANSISTORS BUILT- IN RESISTORS) | |
DTD143EL-AL3-6-R | UTC |
获取价格 |
DIGITAL TRANSISTORS (BUILT- IN RESISTORS) | |
DTD143EL-AL3-R | UTC |
获取价格 |
DIGITAL TRANSISTORS BUILT- IN RESISTORS) | |
DTD143EL-T92-B | UTC |
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DIGITAL TRANSISTORS BUILT- IN RESISTORS) | |
DTD143EL-T92-K | UTC |
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DIGITAL TRANSISTORS BUILT- IN RESISTORS) | |
DTD143EL-T92-R | UTC |
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DIGITAL TRANSISTORS BUILT- IN RESISTORS) | |
DTD143ELTL2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 |