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DTC144TT1G

更新时间： 2024-09-27 04:39:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 51K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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中文翻译

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DTC144TT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SC-59包装说明：LEAD FREE, CASE 318D-04, SC-59, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
其他特性：BUILT IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.338 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DTC144TT1G 数据手册

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DTC144TT1  
Preferred Devices  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base−emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SC−59  
package which is designed for low power surface mount applications.  
http://onsemi.com  
NPN SILICON BIAS  
RESISTOR TRANSISTOR  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 2  
BASE  
(INPUT)  
R
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Moisture Sensitivity Level: 1  
• ESD Rating: Human Body Model: Class 1  
ESD Rating Machine Model: Class B  
2
PIN 1  
EMITTER  
(GROUND)  
3
• The SC−59 package can be soldered using wave or reflow. The  
modified gull−winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
• Pb−Free Package is Available  
1
2
SC−59  
CASE 318D  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
MARKING DIAGRAM  
50  
Vdc  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
8T M G  
Total Device Dissipation  
P
230 (Note 1)  
338 (Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
mW  
D
G
T = 25°C  
A
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
1
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
540 (Note 1)  
370 (Note 2)  
8T = Specific Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Thermal Resistance,  
Junction-to-Lead  
R
q
JL  
264 (Note 1)  
287 (Note 2)  
(Note: Microdot may be in either location)  
Junction and Storage Temperature  
Range  
T , T  
−55 to +150  
J
stg  
*Date Code orientation may vary depending  
upon manufacturing location.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 2  
DTC144TT1/D  
 
1234

中文翻译

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DTC144TT1G 替代型号

型号 品牌 替代类型 描述 数据表
MUN2240T1 ONSEMI

完全替代

 NPN SILICON BIAS RESISTOR TRANSISTOR
DTC144TT1 ONSEMI

完全替代

 Bias Resistor Transistor
MUN2240T1G ONSEMI

类似代替

 Digital Transistors (BRT) R1 = 47k R2 = k

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