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DTC144TUAP PDF预览

DTC144TUAP

更新时间: 2024-09-28 20:02:51
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
2页 1129K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

DTC144TUAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTC144TUAP 数据手册

 浏览型号DTC144TUAP的Datasheet PDF文件第2页 
M C C  
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DTC144TUA  
Features  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
Only the on/off conditions need to be set for operation, making  
device design easy  
NPN Digital Transistor  
SOT-323  
A
Absolute Maximum Ratings  
D
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
50  
50  
5
100  
Unit  
V
V
V
mA  
3
1: IBase  
2: Emitter  
3: Collector  
C
B
1
2
Collector Current-Continuous  
Collector Dissipation  
F
E
PC  
200  
mW  
Junction Temperature  
TJ  
150  
Storage Temperature Range  
TSTG  
-55~150  
H
G
J
K
DIMENSIONS  
Electrical Characteristics  
INCHES  
MAX  
MM  
Sym  
Parameter  
Min  
50  
Typ  
---  
Max Unit  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
.087  
.053  
.087  
Collector-Base Breakdown Voltage  
(IC=50uA, IE=0)  
V(BR)CBO  
---  
V
Collector-Emitter Breakdown Voltage  
(IC=1mA, IB=0)  
.026 Nominal  
0.65Nominal  
1.20  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
---  
---  
V
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
Emitter-Base Breakdown Voltage  
(IE=50uA, IC=0)  
---  
---  
V
G
H
J
Collector Cut-off Current  
(VCB=50V, IE=0)  
---  
---  
0.5  
0.5  
600  
uA  
uA  
---  
K
Emitter Cut-off Current  
(VEB=4V, IC=0)  
IEBO  
---  
---  
Suggested Solder  
Pad Layout  
0.70  
DC Current Gain  
hFE  
100  
300  
(VCE=5V, IC=1mA)  
Collector-Emitter Saturation Voltage  
VCE(sat)  
R1  
---  
32.9  
---  
---  
47  
0.3  
61.1  
---  
V
(IC=10mA, IB=1mA)  
0.90  
Input resistance  
KΩ  
Transition Frequency  
fT  
250  
MHz  
1.90  
(VCE=10V, IC=-5mA, f=100MHz)  
0.65  
0.65  
www.mccsemi.com  
Revision: 1  
2005/06/29  

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