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DTC144TUA-TP PDF预览

DTC144TUA-TP

更新时间: 2024-11-30 09:58:23
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
3页 109K
描述
NPN Digital Transistor

DTC144TUA-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.54
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTC144TUA-TP 数据手册

 浏览型号DTC144TUA-TP的Datasheet PDF文件第2页浏览型号DTC144TUA-TP的Datasheet PDF文件第3页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
DTC144TUA  
Micro Commercial Components  
Features  
xꢀ Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
xꢀ The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
xꢀ Only the on/off conditions need to be set for operation, making  
device design easy  
NPN Digital Transistor  
SOT-323  
D
A
Absolute Maximum Ratings  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
Value  
50  
Unit  
V
3
1: IBase  
2: Emitter  
3: Collector  
Collector-Emitter Voltage  
Emitter-Base voltage  
VCEO  
50  
V
C
B
VEBO  
5
V
1
2
Collector Current-Continuous  
IC  
100  
mA  
F
E
Collector Dissipation  
PC  
200  
mW  
к
к
Junction Temperature  
TJ  
150  
Storage Temperature Range  
TSTG  
-55~150  
H
G
J
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
K
DIMENSIONS  
Electrical Characteristics  
INCHES  
MAX  
MM  
Sym  
Parameter  
Collector-Base Breakdown Voltage  
(IC=50uA, IE=0)  
Min  
Typ  
Max Unit  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
.087  
.053  
.087  
V(BR)CBO  
50  
---  
---  
V
Collector-Emitter Breakdown Voltage  
(IC=1mA, IB=0)  
.026 Nominal  
0.65Nominal  
1.20  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
---  
---  
---  
V
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
Emitter-Base Breakdown Voltage  
(IE=50uA, IC=0)  
---  
V
G
H
J
Collector Cut-off Current  
(VCB=50V, IE=0)  
---  
---  
0.5  
0.5  
600  
uA  
uA  
---  
K
Emitter Cut-off Current  
(VEB=4V, IC=0)  
IEBO  
---  
---  
Suggested Solder  
Pad Layout  
0.70  
DC Current Gain  
(VCE=5V, IC=1mA)  
hFE  
100  
300  
Collector-Emitter Saturation Voltage  
(IC=10mA, IB=1mA)  
VCE(sat)  
R1  
---  
32.9  
---  
---  
47  
0.3  
61.1  
---  
V
0.90  
Input resistance  
Transition Frequency  
(VCE=10V, IC=-5mA, f=100MHz)  
K=  
MHz  
fT  
250  
1.90  
*Marking: 06  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: 3  
2009/02/11  

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